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參數(shù)資料
| 型號(hào)： | PH20100S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 34.3 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 83K |
| 代理商： | PH20100S |
9397 750 13698
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 17 August 2004
5 of 12
Philips Semiconductors
PH20100S
N-channel TrenchMOS standard level FET
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 1 mA; V
GS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
V
DS
= 100 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 10 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
100
-
-
V
2
1.2
3
-
4
-
V
V
I
DSS
drain-source leakage current
-
-
-
0.06
-
2
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
19
43
23
53
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 10 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
I
D
= 20 A; V
DD
= 50 V; V
GS
= 10 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
39
6.9
8.9
2264
290
111
23
15
47
9.3
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
V
DD
= 50 V; I
D
= 10 A; V
GS
= 10 V;
R
G
= 4.7
-
-
0.8
110
1.2
-
V
ns
I
S
= 20 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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