15
0833E–HIREL–01/07
e2v semiconductors SAS 2007
PC7447A
For this example, a Rθsa value of 2.1°C/W or less is required to maintain the die junction temperature
Though the die junction-to-ambient and the heat sink-to-ambient thermal resistances are a common fig-
ure-of-merit used for comparing the thermal performance of various microelectronic packaging
technologies, one should exercise caution when only using this metric in determining thermal manage-
ment because no single parameter can adequately describe three-dimensional heat flow. The final die-
junction operating temperature is not only a function of the component-level thermal resistance, but the
system-level design and its operating conditions. In addition to the component's power consumption, a
number of factors affect the final operating die-junction temperature – airflow, board population (local
heat flux of adjacent components), heat sink efficiency, heat sink attach, heat sink placement, next-level
interconnect technology, system air temperature rise, altitude, and so on.
Due to the complexity and variety of system-level boundary conditions for today's microelectronic equip-
ment, the combined effects of the heat transfer mechanisms (radiation, convection, and conduction) may
vary widely. For these reasons, we recommend using conjugate heat transfer models for the board, as
well as system-level designs.
umes represent this device. Two of the volumes, solder ball-air and substrate, are modeled using the
package outline size of the package. The other two, die, and bump-underfill, have the same size as the
die. The silicon die should be modeled 9.5 × 9.5 × 0.7 mm with the heat source applied as a uniform
source at the bottom of the volume. The bump and underfill layer is modeled as 7.3 × 9.3 × 0.7 mm (or
as a collapsed volume) with orthotropic material properties: 0.6 W/(m × K) in the xy-plane and 1.9 W/(m
× K) in the direction of the z-axis. The substrate volume is 25 × 25 × 1.2 mm, and has 8.1 W/(m × K) iso-
tropic conductivity in the xy-plane and 4 W/(m × K) in the direction of the z-axis. The solder ball and air
layer are modeled with the same horizontal dimensions as the substrate and are 0.6 mm thick. They can
also be modeled as a collapsed volume using orthotropic material properties: 0.034 W/(m × K) in the xy-
plane direction and 3.8 W/(m × K) in the direction of the z-axis.