
P4C1981/1981L, P4C1982/1982L
Page 2 of 13
Document # SRAM114 REV B
CE
1, CE2 ≥ VHC,
Mil.
V
CC = Max.,
Ind./Com’l.
f = 0, Outputs Open
V
IN ≤ VLC or VIN ≥ VHC
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
–0.5 to +7
V
Respect to GND
Terminal Voltage with
–0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
(up to 7.0V)
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
–55 to +125
°C
Bias
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
1, CE2 ≥ VIH,
Mil.
V
CC = Max.,
Ind./Com’l.
f = Max., Outputs Open
___
40
35
___
20
15
40
n/a
1.0
n/a
mA
___
Standby Power Supply
Current
(CMOS Input Levels)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN = 0V
V
OUT = 0V
5
7
Unit
pF
CAPACITANCES(4)
V
CC = 5.0V, TA = 25°C, f = 1.0MHz
n/a = Not Applicable
Symbol
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC = Min., IIN = –18 mA
I
OL = +8 mA, VCC = Min.
I
OH = –4 mA, VCC = Min.
V
CC = Max.
Mil.
V
IN = GND to VCC
Ind./Com’l.
P4C1981 / 1982
Min
2.2
–0.5(3)
V
CC –0.2
–0.5(3)
2.4
–10
–5
–10
–5
Max
V
CC +0.5
0.8
V
CC +0.5
0.2
–1.2
0.4
+10
+5
+10
+5
P4C1981L / 82L
Min
Max
2.2
–0.5(3)
V
CC –0.2
–0.5(3)
2.4
–5
n/a
–5
n/a
V
CC +0.5
0.8
V
CC +0.5
0.2
0.4
–1.2
+5
n/a
+5
n/a
Unit
V
A
Typ.
Industrial
Commercial
Grade(2)
Ambient
Temperature
GND
V
CC
–40°C to +85°C
0°C to +70°C
0V
5.0V ± 10%
0V
5.0V ± 10%
–55°C to +125°C
Military
I
SB1
V
CC = Max.,
Mil.
CE
1, CE2 = VIH
Ind./Com’l.
V
OUT = GND to VCC