參數(shù)資料
型號: P4C169-55LMB
廠商: PYRAMID SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 4K X 4 STANDARD SRAM, 55 ns, CQCC20
封裝: 0.290 X 0.430 INCH, CERAMIC, LCC-20
文件頁數(shù): 8/14頁
文件大?。?/td> 263K
代理商: P4C169-55LMB
3
P4C168, P4C169, P4C170
AC CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
§ P4C168 only
P4C170 only
Chip Select/Deselect for P4C169 and P4C170
Min Max Min Max Min Max Min Max Min Max
tRC
Read Cycle Time
12
15
20
25
35
ns
tAA
Address Access Time
12
15
20
25
35
ns
tAC§
Chip Enable Access Time
12
15
20
25
35
ns
tAC
Chip Select Access Time
8
9
12
15
20
ns
tOH
Output Hold from Address Change
22222
ns
tLZ
Chip Enable to Output in Low Z
22222
ns
tHZ
Chip Disable to Output in High Z
7
8
9
10
15
ns
tOE
Output Enable to Data Valid
8
10
12
15
ns
tOLZ
Output Enable to Output in Low Z
00000
ns
tOHZ
Output Disable to Output in High Z
6
7
9
11
15
ns
tRCS
Read Command Setup Time
00000
ns
tRCH
Read Command Hold Time
00000
ns
tPU§
Chip Enable to Power Up Time
00000
ns
tPD§
Chip Disable to Power Down Time
12
15
20
25
35
ns
Sym
Parameter
Unit
-35
-12
-15
-20
-25
AC CHARACTERISTICS—READ CYCLE (CONTINUED)
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Min Max Min Max Min Max
tRC
Read Cycle Time
45
55
70
ns
tAA
Address Access Time
45
55
70
ns
tAC§
Chip Enable Access Time
45
55
70
ns
tOH
Output Hold from Address Change
2
ns
tLZ
Chip Enable to Output in Low Z
2
ns
tHZ
Chip Disable to Output in High Z
25
30
ns
tRCS
Read Command Setup Time
0
ns
tRCH
Read Command Hold Time
0
ns
tPU§
Chip Enable to Power Up Time
0
ns
tPD§
Chip Disable to Power Down Time
45
55
70
ns
Sym
Parameter
Unit
-45
-55
-70
相關PDF資料
PDF描述
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