參數資料
型號: P0120009P
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: 2W GaAs Power FET (Pb-Free Type)
中文描述: 2W的GaAs功率場效應管(無鉛型)
文件頁數: 7/13頁
文件大?。?/td> 582K
代理商: P0120009P
Application Circuit : 2110-2170MHz
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-7-
Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
C6
R1
C3
R2
L1
C5
C2
C4
L2
C1
C 7
L3
RF in (Rs=50
)
Vg
Vd
D.U.T
RF out (RL=50
)
Z1
Z2
Z3
Z4
Z5
Z6
RF in
KP029J
RF out
Vg
(-0.7~-2V)
(+8V)
C1
C2
R1
C5
C4
R2C6
L2
C7
L3
L1
Vd
C3
Ref. Des.
R1
R2
C1
C2
C3
C4
C5
C6
C7
L1
L2
L3
Value
82
820
3pF
1pF
0.5pF
4pF
1μF
1μF
2pF
22nH
22nH
4.7nH
Part Number
SUSUMU
RR0816 series
MURATA
GRM18 series
TOKO LL1608
series
1.9
2.0
2.1
2.2
2.3
Frequency (GHz)
-30
-20
-10
0
10
20
S12
S22
S11
S21
S
Ref.
Designator
Z1
Z2
Z3
Z4
Z5
Z6
All microstrip lines have a line impedance of 50
.
Electrical length
@ 2.1GHz (deg)
31.76
4.08
13.61
8.62
6.38
4.54
相關PDF資料
PDF描述
P02221B2P 500mW InGaP HBT Amplifier
P048F048M12AL TRANSF T1/E1 1.41CT:1 EE5 SMD
P048F048M24AL VI Chip - PRM-AL Pre-regulator Module
P048K048T24AL VI Chip - PRM-AL Pre-regulator Module
P048K048M24AL VI Chip - PRM-AL Pre-regulator Module
相關代理商/技術參數
參數描述
P012-006 功能描述:交流電源線 2 COND 6’ LAPTOP BLK RoHS:否 制造商:Schaffner 地區(qū):North American 插頭:NEMA 5-15P 插座:C13 Locking 功率額定值:2500 W 電流額定值:10 A 線規(guī) - 美國線規(guī)(AWG):18 電壓額定值:250 V 長度:6 ft 屏蔽: 外殼顏色:Black
P0120CN 5DA4 制造商:STMicroelectronics 功能描述:P0120CN 5DA4 - Tape and Reel
P012-1-010X 制造商:ENSIGN 制造商全稱:ENSIGN 功能描述:Captain Class
P012-1-012X 制造商:ENSIGN 制造商全稱:ENSIGN 功能描述:Captain Class
P012-1-016X 制造商:ENSIGN 制造商全稱:ENSIGN 功能描述:Captain Class