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參數(shù)資料
| 型號： | P0120009P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 2W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 2W的GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 582K |
| 代理商： | P0120009P |
Tc=25°C, Vds=8V
Ids=350mA,
Common Source, Zo=50
(Calibrated to device leads)
Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
0
1
-
5
2
3
-
4
5.0
0
0
0
0
0
2.4GHz
0
S11
S22
1.2GHz
1.2GHz
2.4GHz
1
-
1
10.0
-
-
20
-
30
40
-0.2
0
-.4
-.
0
-
0
45
9
-180
-
S21
S12
1.2GHz
1.2GHz
2.4GHz
0.02
2.0
4.0
6.0
0
0
0.04
0.06
Scale for |S12|
135
-135
-45
2.4GHz
S
Ids
Ids
=400mA
Freq(GHz)
S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.807
176.1
4.225
66.1
0.042
31.9
0.380
176.7
1.4
0.812
167.5
3.630
58.4
0.045
30.5
0.387
173.2
1.6
0.815
159.8
3.179
51.2
0.048
29.2
0.394
170.0
1.8
0.819
152.8
2.826
44.3
0.050
27.5
0.399
166.9
2.0
0.822
146.1
2.545
37.4
0.053
25.1
0.403
163.4
2.2
0.823
139.6
2.316
30.7
0.056
22.6
0.406
159.8
2.4
0.827
133.4
2.124
24.0
0.060
19.5
0.408
155.7
=350mA
Freq(GHz)
S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.808
176.0
4.203
66.2
0.044
31.0
0.400
175.6
1.4
0.812
167.2
3.612
58.5
0.047
29.6
0.407
171.8
1.6
0.818
159.5
3.162
51.4
0.049
28.3
0.414
168.6
1.8
0.821
152.5
2.811
44.4
0.052
26.5
0.417
165.3
2.0
0.823
145.8
2.533
37.6
0.055
24.0
0.422
161.6
2.2
0.824
139.2
2.303
30.9
0.058
21.4
0.423
157.9
2.4
0.828
133.0
2.113
24.2
0.061
18.2
0.427
153.3
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
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