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參數(shù)資料
| 型號： | P0120009P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 2W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 2W的GaAs功率場效應管（無鉛型） |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 582K |
| 代理商： | P0120009P |
Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=400mA
Ids=350mA
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
Device: P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=400mA
Source Matching:Mag 0.74 Ang -156.6
°
Load Matching:Mag 0.554 Ang –171.5°
Device: P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=350mA
Source Matching:Mag 0.74 Ang –156.6°
Load Matching:Mag 0.49 Ang –172.9°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=400mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pout
(dBm)
2.8
7.8
12.7
17.7
22.9
27.7
31.7
Gain
(dB)
12.8
12.8
12.7
12.7
12.9
12.7
11.7
IM3
(dBm)
-72.9
-68.6
-57.7
-42.7
-25.1
2.7
17.7
IM3/Pout
(dBc)
-75.7
-76.3
-70.3
-60.3
-48.0
-25.0
-14.0
IP3
(dBm)
40.6
45.7
47.8
47.8
46.6
39.3
35.2
Id
(mA)
401.3
397.0
387.4
370.0
343.7
323.3
367.9
η
add
(%)
0.1
0.2
0.6
1.9
6.7
21.3
46.9
Id=350mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pout
(dBm)
2.2
7.5
12.5
17.5
22.7
27.5
31.6
Gain
(dB)
12.2
12.5
12.5
12.5
12.7
12.5
11.6
IM3
(dBm)
-72.1
-67.7
-57.6
-42.7
-23.9
3.4
20.9
IM3/Pout
(dBc)
-74.3
-75.2
-70.0
-60.2
-46.7
-24.2
-10.7
IP3
(dBm)
39.4
45.2
47.1
47.3
45.8
38.5
33.2
Id
(mA)
346.7
342.5
333.5
317.3
298.0
289.5
352.1
η
add
(%)
0.1
0.2
0.6
2.1
7.5
23.1
47.3
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
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