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參數(shù)資料
| 型號： | P0120003P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 800mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 800mW的GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 623K |
| 代理商： | P0120003P |
The junction temperature can be calculated by the following
formula.
T
jmax
=(Vds*Ids-P
out
)(R
th
+R
board
+R
hs
)+T
a
P
out
: Output power
R
th
: Thermal resistance between channel and case
R
board
: Thermal resistance of PCB
R
hs
: Thermal resistance of heat sink
T
a
: Ambient temperature
T
jmax
: Maximum junction temperature
Generally, there are two ways of heat radiation. One is the
plated thru hole and the other is the heat sink. Key points will
be illustrated in each case below. Note that no measure
against oscillation is adopted in the figures. In the design of
circuit and layout, you should take stabilizing into account if
necessary.
[Using Thru Hole]
□
Multiple plated thru holes are required directly below the
device.
□
Place more than 2 machine screws as close to the ground
pin (pin 4) as possible. The PCB is screwed on the
mounting plate or the heat sink to lower the thermal
resistance of the PCB.
□
Lay out a large ground pad area with multiple plated thru
holes around pin 4 of the device.
□
The required matching and feedback circuit described in
the application circuit examples should be connected to
the device, although it is not shown in the figure below.
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-10-
Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
[Using Heat Sink]
If you cannot get the junction temperature lower than the
absolute maximum rating only with the plated thru holes,
then you need to employ the heat sink. Attaching the heat
sink directly under pin 4 of the device improves the thermal
resistance between junction and ambient.
G
[Note]
□
Ground/thermal vias are critical for the proper device
performance. Drills of the recommended diameters should
be used in the fabrication of vias.
□
Add as much copper a s possible to inner and outer layers
near the part to ensure optimal thermal performance.
□
Mounting screws can be added near the part to fasten the
board to heat sink. Ensure that the ground/thermal via region
contacts the heat sink.
□
Do not put solder mask on the backside of the PCB in the
region where the board contacts the heat sink.
□
RF trace width depends upon the PCB material and
construction.
□
Use 1 oz. Copper minimum.
φ
0.4 Plated Thru Holes
φ
3 Plated Thru Hole
for 2.5 Machine Screws
Package Outline
4-R0.3
Heatsink
1.9
×
2.85
(4-R0.3)
2
2
0
φ
5 Soldermask Keepout
φ
3 Plated Thru Hole
for 2.5 Machine Screws
φ
5 Soldermask Keepout
Grand Plane
rand Plane
φ
0.4 Plated Thru Holes
φ
0.3 Plated Thru Holes
φ
5 Soldermask Keepout
Package Outline
Keepout
for 2.5 Machine Screws
Grand Plane
φ
5 Soldermask
φ
3 Plated Thru Hole
for 2.5 Machine Screws
φ
3 Plated Thru Hole
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| P0120008P | 1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 2W GaAs Power FET (Pb-Free Type) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P0120004P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type) |
| P012-006 | 功能描述:交流電源線 2 COND 6’ LAPTOP BLK RoHS:否 制造商:Schaffner 地區(qū):North American 插頭:NEMA 5-15P 插座:C13 Locking 功率額定值:2500 W 電流額定值:10 A 線規(guī) - 美國線規(guī)（AWG）:18 電壓額定值:250 V 長度:6 ft 屏蔽: 外殼顏色:Black |
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