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參數(shù)資料
| 型號： | NUS5530MN |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |
| 中文描述： | 集成功率MOSFET與進(jìn)步黨低Vce（sat）開關(guān)晶體管 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 167K |
| 代理商： | NUS5530MN |
NUS5530MN
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS FOR PNP TRANSISTORS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage (I
C
=
10 mAdc, I
B
= 0)
V
(BR)CEO
35
45
Vdc
Collector
Base Breakdown Voltage (I
C
=
0.1 mAdc, I
E
= 0)
V
(BR)CBO
55
65
Vdc
Emitter
Base Breakdown Voltage (I
E
=
0.1 mAdc, I
C
= 0)
V
(BR)EBO
5.0
7.0
Vdc
Collector Cutoff Current (V
CB
=
35 Vdc, I
E
= 0)
I
CBO
0.03
0.1
Adc
Collector
Emitter Cutoff Current (V
CES
=
35 Vdc)
I
CES
0.03
0.1
Adc
Emitter Cutoff Current (V
EB
=
6.0 Vdc)
I
EBO
0.01
0.1
Adc
ON CHARACTERISTICS
DC Current Gain (Note 7)
(I
C
=
1.0 A, V
CE
=
2.0 V)
(I
C
=
1.5 A, V
CE
=
2.0 V)
(I
C
=
2.0 A, V
CE
=
2.0 V)
h
FE
100
100
100
200
200
200
400
Collector
Emitter Saturation Voltage (Note 7)
(I
C
=
0.1 A, I
B
=
0.010 A)
(I
C
=
1.0 A, I
B
=
0.010 A)
(I
C
=
2.0 A, I
B
=
0.02 A)
V
CE(sat)
0.10
0.15
0.30
V
Base
Emitter Saturation Voltage (Note 7)
(I
C
=
1.0 A, I
B
=
0.01 A)
V
BE(sat)
0.68
0.85
V
Base
Emitter Turn
on Voltage (Note 7)
(I
C
=
2.0 A, V
CE
=
3.0 V)
V
BE(on)
0.81
0.875
V
Cutoff Frequency (I
C
=
100 mA, V
CE
=
5.0 V, f = 100 MHz)
f
T
100
MHz
Input Capacitance (V
EB
=
0.5 V, f = 1.0 MHz)
Cibo
600
650
pF
Output Capacitance (V
CB
=
3.0 V, f = 1.0 MHz)
Cobo
85
100
pF
Turn
on Time (V
CC
=
10 V, I
B1
=
100 mA, I
C
=
1 A, R
L
= 3 )
t
on
35
nS
Turn
off Time (V
CC
=
10 V, I
B1
= I
B2
=
100 mA, I
C
= 1 A, R
L
= 3 )
7. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle
≤
2%
t
off
225
nS
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