參數(shù)資料
型號(hào)： NUS5530MN
廠商： ON SEMICONDUCTOR
英文描述： Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
中文描述： 集成功率MOSFET與進(jìn)步黨低Vce（sat）開關(guān)晶體管
文件頁數(shù)： 2/9頁
文件大小： 167K
代理商： NUS5530MN
NUS5530MN
http://onsemi.com
2
MAXIMUM RATINGS FOR PNP TRANSISTORS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
35
Vdc
Collector-Base Voltage
55
Vdc
Emitter-Base Voltage
5.0
Vdc
Collector Current
Continuous
2.0
Adc
Collector Current
Peak
7.0
A
Electrostatic Discharge
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS FOR P
CHANNEL FET
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction
to
Ambient (Note 4)
t
5 sec
Steady State
R
JA
40
80
50
95
°
C/W
Maximum Junction
to
Foot (Drain)
Steady State
R
JF
15
20
°
C/W
THERMAL CHARACTERISTICS FOR PNP TRANSISTORS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
635
5.1
mW
mW/
°
C
Thermal Resistance, Junction
to
Ambient
R
JA
(Note 1)
P
D
(Note 2)
200
°
C/W
Total Device Dissipation
T
= 25
°
C
Derate above 25
°
C
1.35
11
W
mW/
°
C
Thermal Resistance, Junction
to
Ambient
R
JA
(Note 2)
R
JL
P
(Notes 2 & 3)
90
°
C/W
Thermal Resistance, Junction
to
Lead #1
15
°
C/W
Total Device Dissipation (Single Pulse < 10 sec)
2.75
W
Junction and Storage Temperature Range
1. FR
4 @ 100 mm
2
, 1 oz copper traces.
2. FR
4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
T
J
, T
stg
55 to +150
°
C
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