參數(shù)資料
型號(hào)： NUS5530MN
廠(chǎng)商： ON SEMICONDUCTOR
英文描述： Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
中文描述： 集成功率MOSFET與進(jìn)步黨低Vce（sat）開(kāi)關(guān)晶體管
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 167K
代理商： NUS5530MN
NUS5530MN
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS FOR P
CHANNEL FET
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.6
1.2
V
Gate
Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
16 V, V
GS
= 0 V
1.0
A
V
DS
=
16 V, V
GS
= 0 V,
T
J
= 85
°
5.0
On
State Drain Current (Note 5)
I
D(on)
V
DS
5.0 V, V
GS
=
4.5 V
20
A
Drain
Source On
State Resistance (Note 5)
r
DS(on)
V
GS
=
3.6 V, I
D
=
1.0 A
0.050
0.06
V
GS
=
2.5 V, I
D
=
1.0 A
0.070
0.083
Forward Transconductance (Note 5)
g
fs
V
DS
=
10 V, I
D
=
3.9 A
12
Mhos
Diode Forward Voltage (Note 5)
V
SD
I
S
=
2.1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
(Note 6)
Total Gate Charge
Q
G
V
DS
=
10 V, V
=
4.5 V,
I
D
=
3.9 A
9.7
22
nC
Gate
Source Charge
Q
GS
1.2
Gate
Drain Charge
Q
GD
3.6
Input Capacitance
C
iss
V
DS
=
5.0 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz
710
pF
Output Capacitance
C
oss
400
Reverse Transfer Capacitance
C
rss
140
Turn
On Delay Time
t
d(on)
V
DD
=
10 V, R
L
= 10
I
D
1.0 A, V
GEN
=
4.5 V,
R
G
= 6
14
30
ns
Rise Time
t
r
22
55
Turn
Off Delay Time
t
d(off)
42
100
Fall Time
t
f
35
70
Source
Drain Reverse Recovery Time
t
rr
I
F
=
1.1 A, di/dt = 100 A/ s
30
60
4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
5. Pulse Test: Pulse Width
300 s, Duty Cycle
6. Guaranteed by design, not subject to production testing.
2%.
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