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參數(shù)資料
| 型號： | NTQD6866R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 6.9 Amps, 20 Volts |
| 中文描述： | 4700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, CASE 948S-01, TSSOP-8 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 71K |
| 代理商： | NTQD6866R2 |
NTQD6866R2
http://onsemi.com
4
14
12
10
18
8
6
4
2
0
0.5
16
0.04
0.03
0.02
0.01
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
R
)
R
)
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
R
(
I
2
1.5
1
0.5
100
10
1000
10000
0
12
0.6
10
0.4
0.2
8
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0
0.045
0.04
0.03
2
0.02
0.015
0.01
4
8
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
16
–50
50
25
0
–25
75
125
100
2.5
1
0
12
8
16
20
6
4
2
0
2
6
0
8
6
4
10
16
12
150
14
0.8
1
1.5
2
3 V
VDS
≥
10 V
TJ = 25
°
C
TJ = –55
°
C
TJ = 100
°
C
ID = 5.8 A
TJ = 25
°
C
VGS = 2.5 V
VGS = 0 V
TJ = 150
°
C
TJ = 100
°
C
ID = 2.9 A
VGS = 4.5 V
VGS = 10 V
2.2 V
2 V
1.6 V
1.4 V
1.2 V
1.8 V
14
VGS = 4.5 V
5 V
1.2
1.4
1.6
1.8
TJ = 25
°
C
0.025
0.035
TJ = 25
°
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTQD6866R2G | 功能描述:MOSFET 20V 5.8A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6.6 Amps, 20 Volts |
| NTQD6968N | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968NR2 | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968NR2G | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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