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參數(shù)資料
| 型號： | NTQD6866R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 6.9 Amps, 20 Volts |
| 中文描述： | 4700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, CASE 948S-01, TSSOP-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | NTQD6866R2 |
NTQD6866R2
http://onsemi.com
2
MAXIMUM RATINGS
(continued)
Rating
Symbol
Value
Unit
Thermal Resistance – Both Die
Junction–to–Ambient (Note 5)
Total Power Dissipation @ TA = 25 C
Continuous Drain Current @ TA = 25 C
Pulsed Drain Current (Note 5)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25
°
C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 5.5 Apk, L = 10 mH, RG = 25
)
Maximum Lead Temperature for Soldering Purposes for 10 seconds
RJA
PD
ID
IDM
TJ, Tstg
EAS
160
0.78
4.3
14
°
C/W
W
Adc
Adc
°
C
mJ
–55 to +150
150
260
TL
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
–
–
18.5
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 20 Vdc, TJ = 25
°
C)
(VGS = 0 Vdc, VDS = 20 Vdc, TJ = 100
°
C)
IDSS
–
–
–
–
1.0
10
μ
Adc
Gate–Body Leakage Current
(VGS =
±
12 Vdc, VDS = 0 Vdc)
IGSS
–
–
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
0.6
–
0.9
–2.7
1.2
–
Vdc
mV/
°
C
Static Drain–to–Source On–State Resistance
(VGS = 4.5 Vdc, ID = 6.9 Adc)
(VGS = 4.5 Vdc, ID = 5.8 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)
(VGS = 2.5 Vdc, ID = 2.9 Adc)
RDS(on)
–
–
–
–
0.026
0.025
0.030
0.030
0.032
0.030
0.038
0.038
Forward Transconductance
(VDS = 10 Vdc, ID = 5.8 Adc)
gFS
–
14
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
–
875
1400
pF
Output Capacitance
Coss
–
325
550
Reverse Transfer Capacitance
Crss
–
100
175
5. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
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| NTQD6866R2G | 功能描述:MOSFET 20V 5.8A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6.6 Amps, 20 Volts |
| NTQD6968N | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968NR2 | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968NR2G | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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