參數(shù)資料
型號： NTMFS4841N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30 V, 57 A(30V, 57A, 功率MOSFET)
中文描述： 功率MOSFET 30五，57甲（30V的，57A條，功率MOSFET的）
文件頁數(shù)： 2/7頁
文件大?。?/td> 85K
代理商： NTMFS4841N
NTMFS4841N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoCase (Drain)
R
JC
3
°
C/W
JunctiontoAmbient – Steady State (Note 1)
R
JA
57.7
JunctiontoAmbient – Steady State (Note 2)
R
JA
143.4
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1
A
T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.6
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
4.7
7.0
m
I
D
= 15 A
4.6
V
GS
= 4.5 V
I
D
= 30 A
9.2
11.4
I
D
= 15 A
8.5
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
16
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1436
pF
Output Capacitance
C
OSS
348
Reverse Transfer Capacitance
C
RSS
177
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
11.5
17
nC
Threshold Gate Charge
Q
G(TH)
2.0
GatetoSource Charge
Q
GS
5.0
GatetoDrain Charge
Q
GD
5.1
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
25.4
nC
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
13.5
ns
Rise Time
t
r
66.5
TurnOff Delay Time
t
d(OFF)
15.5
Fall Time
t
f
7.5
TurnOn Delay Time
t
d(ON)
V
GS
= 11.5 V, V
= 15 V,
I
D
= 15 A, R
G
= 3.0
8.1
ns
Rise Time
t
r
24.2
TurnOff Delay Time
t
d(OFF)
22.8
Fall Time
t
f
5.7
3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMFS4841NH 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL
NTMFS4841NHT1G 功能描述:MOSFET NFET S08FL 30V 57A 7mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4841NHT3G 功能描述:MOSFET NFET S08FL 30V 57A 7MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4841NT1G 功能描述:MOSFET NFET 30V 57A 7MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4841NT3G 功能描述:MOSFET NFET 30V 57A 7MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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