參數(shù)資料
型號: NTJD2152P
廠商: ON SEMICONDUCTOR
英文描述: Trench Small Signal MOSFET 8 V, Dual P Channel, SC88 ESD Protection(8V雙功率MOSFET帶ESD保護(hù))
中文描述: 戴小信號MOSFET 8伏特的電壓,雙P通道,SC88 ESD保護(hù)(8V的雙功率MOSFET的帶靜電放電保護(hù))
文件頁數(shù): 5/6頁
文件大小: 133K
代理商: NTJD2152P
NTJD2152P
http://onsemi.com
5
ORDERING INFORMATION
Device Order Number
Package Type
Tape and Reel Size
NTJD2152PT1
SOT
363
3000 / Tape & Reel
NTJD2152PT1G
SOT
363
(Pb
Free)
3000 / Tape & Reel
NTJD2152PT2
SOT
363
3000 / Tape & Reel
NTJD2152PT2G
SOT
363
(Pb
Free)
3000 / Tape & Reel
NTJD2152PT4
SOT
363
10,000 / Tape & Reel
NTJD2152PT4G
SOT
363
(Pb
Free)
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTJD2152P_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Small Signal MOSFET
NTJD2152PT1 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT1G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT2 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT2G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube