參數(shù)資料
型號(hào)： NTJD2152P
廠商： ON SEMICONDUCTOR
英文描述： Trench Small Signal MOSFET 8 V, Dual P Channel, SC88 ESD Protection(8V雙功率MOSFET帶ESD保護(hù))
中文描述： 戴小信號(hào)MOSFET 8伏特的電壓，雙P通道，SC88 ESD保護(hù)（8V的雙功率MOSFET的帶靜電放電保護(hù)）
文件頁數(shù)： 2/6頁
文件大?。?/td> 133K
代理商： NTJD2152P
NTJD2152P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
=25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
250 A
8.0
10.5
V
Drain
to
Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
T
J
6.0
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
=
6.4
V
V
DS
= 0 V, V
GS
=
±
8.0
V
1.0
A
Gate
to
Source Leakage Current
I
GSS
10
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, ID =
250 A
0.45
0.83
1.0
V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.2
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
=
4.5
V, I
D
=
0.57
A
0.22
0.3
V
GS
=
2.5
V, I
D
=
0.48
A
0.32
0.46
V
GS
=
1.8
V, I
D
=
0.20
A
0.51
0.9
Forward Transconductance
g
FS
V
GS
=
4.0
V, I
D
=
0.57
A
2.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
8.0
V
160
225
pF
Output Capacitance
C
OSS
38
55
Reverse Transfer Capacitance
C
RSS
28
40
Total Gate Charge
Q
G(TOT)
V
GS
=
4.5 V, V
DS
=
5.0
V,
I
D
=
0.6
A
2.2
4.0
nC
Threshold Gate Charge
Q
G(TH)
0.1
Gate
to
Source Charge
Q
GS
0.5
Gate
to
Drain Charge
Q
GD
0.5
SWITCHING CHARACTERISTICS
(Note 3)
Turn
On Delay Time
td
(ON)
V
GS
=
4.5
V, V
DD
=
4.0
V,
D
=
0.5
A, R
G
= 8.0
13
ns
Rise Time
tr
23
Turn
Off Delay Time
td
(OFF)
50
Fall Time
tf
36
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
0.23
A
T
J
= 25
°
C
T
J
= 125
°
C
0.76
1.1
V
0.63
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ s,
I
S
=
0.77
A
78
ns
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTJD2152P_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Small Signal MOSFET
NTJD2152PT1 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT1G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT2 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJD2152PT2G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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