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參數(shù)資料
| 型號： | NTJS3151P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Trench Power MOSFET 12V, 3.3A, Single P Channel, ESD Protected SC88(12V, 3.3A, 功率MOSFET) |
| 中文描述： | 戴12V的功率MOSFET，3.3A，單P通道，ESD保護SC88（12V的，3.3A，功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 134K |
| 代理商： | NTJS3151P |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTJS3151/D
NTJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P
Channel,
ESD Protected SC
88
Features
Leading Trench Technology for Low R
DS(ON)
Extending Battery Life
SC
88 Small Outline (2x2 mm, SC70
6 Equivalent)
Gate Diodes for ESD Protection
Pb
Free Packages are Available
Applications
High Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain
to
Source Voltage
V
DSS
12
V
Gate
to
Source Voltage
V
GS
±
12
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
2.7
A
2.0
t
≤
5 s
3.3
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
0.625
W
Pulsed Drain Current
t
p
= 10 s
I
DM
8.0
A
°
C
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
Source Current (Body Diode)
I
S
0.8
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Symbol
Max
Units
Junction
to
Ambient – Steady State
R
JA
200
°
C/W
Junction
to
Ambient
t
≤
5 s
R
JA
141
Junction
to
Lead – Steady State
R
JL
102
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
SC
88/SOT
363
CASE 419B
STYLE 28
MARKING DIAGRAM &
PIN ASSIGNMENT
D
D
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
TJ
M
1
6
1
TJ
M
= Device Code
= Date Code
= Pb
Free Package
S
D
D
G
(Note: Microdot may be in either location)
V
(BR)DSS
R
DS(on)
Typ
I
D
Max
12 V
45 m @
4.5 V
67 m @
2.5 V
133 m @
1.8 V
3.3 A
Top View
SC
88 (SOT
363)
D
D
S
D
D
6
5
4
1
2
3
G
S
D
G
3 k
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相關代理商/技術參數(shù) |
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|---|---|
| NTJS3151PT1 | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJS3151PT1G | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJS3151PT2 | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJS3151PT2G | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJS3157N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 |
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