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參數(shù)資料
| 型號： | NTJD2152P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Trench Small Signal MOSFET 8 V, Dual P Channel, SC88 ESD Protection(8V雙功率MOSFET帶ESD保護) |
| 中文描述： | 戴小信號MOSFET 8伏特的電壓，雙P通道，SC88 ESD保護（8V的雙功率MOSFET的帶靜電放電保護） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 133K |
| 代理商： | NTJD2152P |
NTJD2152P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
0
1.4
1
6
2
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
D
0.6
0.2
0
Figure 1. On
Region Characteristics
0.4
1.4
2
1.2
2.4
1
0.6
0.2
0.8
0
0
Figure 2. Transfer Characteristics
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
0.1
0.4
1
0.3
0.2
0
Figure 3. On
Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
D
D
T
S
I
D
D
Figure 4. On
Resistance vs. Drain Current and
Temperature
50
0
25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. On
Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
0.5
0.2
0.6
T
J
=
55
°
C
T
J
= 125
°
C
75
150
I
D
=
0.7 A
V
GS
=
4.5 V
and
2.5 V
R
D
D
T
S
R
4
25
°
C
1.6
1.2 V
0
1.4
Figure 6. Capacitance Variation
1.4 V
1.6 V
1.8 V
8
2 V
V
DS
≥
10 V
0.4
V
GS
=
2.2 V
V
GS
=
4.5 V to
2.6 V
0.4
0.8
1.2
1.2
0.8
0.4
1.6
T
J
= 125
°
C
1.2
0.8
V
GS
=
4.5 V
T
J
=
55
°
C
T
J
= 25
°
C
0.1
0.4
1
0.3
0.2
0
I
D,
DRAIN CURRENT (AMPS)
R
D
D
T
S
0.5
0.2
0.6
T
J
= 125
°
C
0
1.4
0.4
1.2
0.8
V
GS
=
2.5 V
T
J
=
55
°
C
T
J
= 25
°
C
V
GS
= 0 V
4
8
300
180
120
60
0
GATE
TO
SOURCE OR DRAIN
TO
SOURCE
VOLTAGE (VOLTS)
C
T
J
= 25
°
C
C
oss
C
iss
C
rss
240
6
0
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTJD2152P_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Trench Small Signal MOSFET |
| NTJD2152PT1 | 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD2152PT1G | 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD2152PT2 | 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD2152PT2G | 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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