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參數(shù)資料
| 型號： | NE5500179A-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | SILICON POWER MOS FET |
| 中文描述： | 硅功率MOS FET |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 66K |
| 代理商： | NE5500179A-T1 |
Data Sheet PU10118EJ01V1DS
9
NE5500179A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220
°
C or higher
Preheating time at 120 to 180
°
C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260
°
C or below
: 10 seconds or less
: 60 seconds or less
: 120
±
30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200
°
C or higher
Preheating time at 120 to 150
°
C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215
°
C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature) : 120
°
C or below
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260
°
C or below
: 10 seconds or less
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per pin of device)
Maximum chlorine content of rosin flux (% mass)
: 350
°
C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
!
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5500179A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5500234-AZ | 功能描述:MOSFET LD N-CH 4.8V 400MA SOT89 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| NE5500234-T1-AZ | 功能描述:MOSFET LD N-CH 4.8V 400MA SOT89 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| NE5500479A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| NE5500479A-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS 制造商:Renesas 功能描述:Trans RF MOSFET N-CH 20V 1A 4-Pin Case 79A |
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