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參數(shù)資料
| 型號(hào)： | NE5510179A |
| 廠商： | NEC Corp. |
| 英文描述： | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| 中文描述： | 3.5V的操作硅射頻功率MOSFET為1.9 GHz的輸電功放 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | NE5510179A |
3.5 V OPERATION SILICON
RF POWER MOSFET FOR 1.9 GHZ
TRANSMISSION AMPLIFIERS
California Eastern Laboratories
FEATURES
HIGH OUTPUT POWER:
29.5 dBm TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 22 dBm
HIGH LINEAR GAIN:
11 dB TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 5dBm
HIGH POWER ADDED EFFICIENCY:
50% TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 22 dBm
SINGLE SUPPLY:
2.8 to 6.0 V
SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
NE5510179A
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PART NUMBER
PACKAGE OUTLINE
CHARACTERISTICS
Gate-to-Source Leakage Current
NE5510179A
79A
TYP
SYMBOLS
I
GSS
UNITS
nA
MIN
MAX
100
TEST CONDITIONS
V
GSS
= 6.0 V
I
DSS
Drain-to-Source Leakage Current
nA
100
V
DSS
= 8.5 V
V
TH
Gate Threshold Voltage
V
1.0
1.35
2.0
V
DS
= 3.5 V, I
DS
=
1 mA
gm
Transconductance
S
0.82
V
DS
= 3.5 V, I
DS1
=
300 mA, I
DS2
=
500 mA
R
DS (ON)
Drain-to-Source On Resistance
0.5
V
GS
= 6.0 V, V
DS
=
0.5 V
BV
DSS
Drain-to-Source Breakdown Voltage
V
20
24
I
DSS
= 10 A
DESCRIPTION
The NE5510179A is an N-Channel silicon power MOSFET
specially designed as the transmission driver amplifier for 3.5
V GSM1800 and GSM 1900 handsets. Dies are manufactured
using NEC's NEWMOS technology (NEC's 0.6
μ
m WSi gate
lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.5 dBm output power with 50% power
added efficiency at 1.9 GHz under the 3.5 V supply voltage,
or can deliver 29 dBm output power at 2.8 V by varying the
gate voltage as a power control function.
DIGITAL CELLULAR PHONES:
3.5 V GSM 1800/GSM 1900 Class 1 Handsets
OTHERS:
1.6 - 2.0 GHz TDMA Applications
APPLICATIONS
8
X
Source
Gate
0
Drain
4.2 Max
5
4
0
5.7 Max
0.4 – 0.15
Source
Gate
Drain
1
1
3.6 – 0.2
0.8 Max
0
0
1.5 – 0.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE5510179A-T1 | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| NE5511279A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5511279A-T1 | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5510179A-T1 | 制造商:CEL 制造商全稱(chēng):CEL 功能描述:3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| NE5510279A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5510279A-T1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
| NE5510279A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5511279A | 功能描述:射頻MOSFET電源晶體管 RO 551-NE5511279A-A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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