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| 型號： | NCV7380DR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC TRANSCEIVER LINEAR 8-SOIC |
| 產(chǎn)品變化通告： | Product Discontinuation 21/Jun/2007 |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 類型： | 收發(fā)器 |
| 驅(qū)動器/接收器數(shù)： | 1/1 |
| 規(guī)程： | LIN |
| 電源電壓： | 7 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 帶卷 (TR) |
NCV7380
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (VS = 7.0 to 18 V, VCC = 4.5 to 5.5 V and TA = 40 to 125°C unless otherwise noted.)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
GENERAL
VCC Undervoltage Lockout
VCC_UV
VS > 6.0 V, TxD = L, EN = H
2.75
4.3
V
Supply Current, Dominant
ISd
VS = 18 V, VCC = 5.5 V,
TxD = L
1.0
3.0
mA
Supply Current, Dominant
ICCd
VS = 18 V, VCC = 5.5 V,
TxD = L
0.8
1.5
mA
Supply Current, Recessive
ISr
VS = 18 V, VCC = 5.5 V,
TxD = Open
10
20
mA
Supply Current, Recessive
ICCr
VS = 18 V, VCC = 5.5 V,
TxD = Open
14
30
mA
Supply Current, Recessive
ISr + ICCr
VS = 12 V, VCC = 5.0 V,
TxD = Open, TA = 25°
24
mA
Thermal Shutdown
Tsd (Note 5)
155
180
°C
Thermal Recovery
Thys (Note 5)
126
140
150
°C
BUS Transmit
Short Circuit Bus Current
IBUS_LIM
(Notes 6 and 7)
VBUS = VS, Driver On
120
200
mA
Pullup Current Bus
IBUS_PU
(Notes 6 and 7)
VBUS = 0, VS = 12 V, Driver Off
600
200
mA
Bus Reverse Current, Recessive
IBUS_PAS_rec
(Notes 6 and 7)
VBUS > VS, 8.0 V < VBUS < 18 V,
7.0 V < VS < 18 V , Driver Off
5.0
mA
Bus Reverse Current Loss of
Battery
IBUS
(Notes 6 and 7)
VS = 0 V, 0 V < VBUS < 18 V
5.0
mA
Bus Current During Loss of
Ground
IBUS_NO_GND
(Notes 6 and 7)
VS = 12 V, 0 < VBUS < 18 V
1.0
1.0
mA
Transmitter Dominant Voltage
VBUSdom_DRV_2
(Note 6)
VS = 7.0 V, Load = 500 W
1.2
V
Transmitter Dominant Voltage
VBUSdom_DRV_3
(Note 6)
VS = 18 V, Load = 500 W
2.0
V
Bus Input Capacitance
CBUS (Note 5)
Pulse Response via 10 kW,
VPULSE = 12 V, VS = Open
25
35
pF
BUS Receive
Receiver Dominant Voltage
VBUSdom
(Notes 6 and 7)
0.4*VS
V
Receiver Recessive Voltage
VBUSrec
(Notes 6 and 7)
0.6*VS
V
Center Point of Receiver
Threshold
VBUS_CNT
(Notes 6 and 7)
VBUS_CNT = (VBUSdom and VBUSrec)/2
0.487
*VS
0.5*VS
0.512*VS
V
Receiver Hysteresis
VHYS
(Notes 6 and 7)
VBUS_CNTt = (VBUSrecVBUSdom)
0.16*VS
V
5. No production test, guaranteed by design and qualification.
6. In accordance to LIN physical layer specification 1.3.
7. In accordance to LIN physical layer specification 2.0.
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