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參數(shù)資料
| 型號(hào)： | NCV7380DR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC TRANSCEIVER LINEAR 8-SOIC |
| 產(chǎn)品變化通告： | Product Discontinuation 21/Jun/2007 |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 類型： | 收發(fā)器 |
| 驅(qū)動(dòng)器/接收器數(shù)： | 1/1 |
| 規(guī)程： | LIN |
| 電源電壓： | 7 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 帶卷 (TR) |
NCV7380
http://onsemi.com
3
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC.
The maximum ratings given in the table below are
limiting values that do not lead to a permanent damage of
the device but exceeding any of these limits may do so.
Long term exposure to limiting values may effect the
reliability of the device.
OPERATING CONDITIONS
Characteristic
Symbol
Min
Max
Unit
Battery Supply Voltage (Note 1)
VS
7.0
18
V
Supply Voltage
VCC
4.5
5.5
V
Operating Ambient Temperature
TA
40
+125
°C
MAXIMUM RATINGS
Rating
Symbol
Condition
Min
Max
Unit
Battery Supply Voltage
VS
t < 1 min
0.3
30
V
Load Dump, t < 500 ms
40
Supply Voltage
VCC
0.3
+7.0
V
Transient Supply Voltage
VS.tr1
ISO 7637/1 Pulse 1 (Note 2)
150
V
Transient Supply Voltage
VS..tr2
ISO 7637/1 Pulses 2 (Note 2)
100
V
Transient Supply Voltage
VS..tr3
ISO 7637/1 Pulses 3A, 3B
150
V
BUS Voltage
VBUS
t < 500 ms , Vs = 18 V
27
40
V
t < 500 ms ,Vs = 0 V
40
Transient Bus Voltage
VBUS..tr1
ISO 7637/1 Pulse 1 (Note 3)
150
V
Transient Bus Voltage
VBUS.tr2
ISO 7637/1 Pulses 2 (Note 3)
100
V
Transient Bus Voltage
VBUS.tr3
ISO 7637/1 Pulses 3A, 3B (Note 3)
150
V
DC Voltage on Pins TxD, RxD
VDC
0.3
7.0
V
ESD Capability, Charged Device Model
VESDCDM
(Note 4)
1.0
kV
ESD Capability of RxD, TxD, VCC, BUS Pins
ESD Capability of VS Pin
VESDHBM
Human body model, equivalent to
discharge 100 pF with 1.5 kW (Note 4)
2.0
1.5
2.0
1.5
kV
Maximum Latchup Free Current at Any Pin
ILATCH
500
mA
Maximum Power Dissipation
Ptot
At TA = 125°C
197
mW
Thermal Impedance
qJA
In Free Air
152
°C/W
Storage Temperature
Tstg
55
+150
°C
Junction Temperature
TJ
40
+150
°C
LEAD TEMPERATURE SOLDERING REFLOW
Lead Free, 60 sec 150 sec above 217, 40 sec Max at Peak
TSLD
265 Peak
°C
Leaded, 60 sec 150 sec above 183, 30 sec Max at Peak
TSLD
240 Peak
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VS is the IC supply voltage including voltage drop of reverse battery protection diode, VDROP = 0.4 to 1.0 V, VBAT_ECU voltage range is
7.0 to 18 V.
2. ISO 7637 test pulses are applied to VS via a reverse polarity diode and > 2.0 mF blocking capacitor.
3. ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1.0 nF.
4. This device incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AECQ100002 (EIA/JESD22A 114C)
ESD CDM tested per EIA/JESD22C 101C, Field Induced Model.
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