- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄1956 > NCN6004AFTBR2G (ON Semiconductor)IC INTERFACE SAM/SIM DUAL 48TQFP PDF資料下載
參數(shù)資料
| 型號： | NCN6004AFTBR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 18/40頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC INTERFACE SAM/SIM DUAL 48TQFP |
| 標準包裝： | 1 |
| 應(yīng)用： | PC，PDA |
| 接口： | 微控制器 |
| 電源電壓： | 1.8 V ~ 5.5 V |
| 封裝/外殼： | 48-TQFP 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 48-TQFP（7x7） |
| 包裝： | 標準包裝 |
| 安裝類型： | 表面貼裝 |
| 其它名稱： | NCN6004AFTBR2GOSDKR |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
NCN6004A
http://onsemi.com
25
Figure 17. Typical CRD_VCC Ripple Voltage
NOTE:
Operating conditions under full output load.
Figure 18. Typical Card Voltage Turn ON and Startup
Sequence
Figure 19. Typical Card Supply Turn OFF
58
60
62
64
66
68
70
72
74
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Figure 20. CRD_VCC Efficiency as a Function of the
Input Supply Voltage
Vbat (V)
Eff
(%)
Vout = 1.8 V
Vout = 5.0 V
Vout = 3.0 V
Lout = 22 mH
ESR = 2
W
The curves in Figure 20, illustrate the typical behavior
under full output current load (35 mA, 60 mA and 65 mA),
according to EMV specifications.
During the operation, the inductor is subject to high peak
current as depicted in Figure 21 and the magnetic core must
sustain this level of current without damage. In particular,
the ferrite material shall not be saturated to avoid
uncontrolled current spike during the charge up cycle.
Moreover, since the DC/DC efficiency depends upon the
losses developed into the active and passive components,
selecting a low ESR inductor is preferred to reduce these
losses to a minimum.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NCN6804MNR2G | IC SMART CARD DUAL W/SPI 32-QFN |
| NCN7200MTTWG | IC MUX/DEMUX OCTAL 1X2 42WQFN |
| NCN8024DTBR2G | SMART CARD IC 5V/3V TSSOP |
| NCN8024RDWR2G | IC SMART CARD IC2 28SOIC |
| NCN8025MTTBG | IC SMART CARD I2C 16-QFN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN6010 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010DTB | 功能描述:轉(zhuǎn)換 - 電壓電平 2.7V Sim Card RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。