- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189004 > NANDB9R4N2CZBA5E (NUMONYX) SPECIALTY MEMORY CIRCUIT, PBGA149 PDF資料下載
參數(shù)資料
| 型號： | NANDB9R4N2CZBA5E |
| 廠商： | NUMONYX |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA149 |
| 封裝： | 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-149 |
| 文件頁數(shù)： | 49/52頁 |
| 文件大?。?/td> | 1126K |
| 代理商： | NANDB9R4N2CZBA5E |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁當(dāng)前第49頁第50頁第51頁第52頁
Description
NANDxxxxNx
1
Description
The NANDxxxxNx devices combine multiple memory devices in a multichip package or a
package-on-package solution that includes:
l
1.8/2.6 V supply 1- or 2-Gbit (x8/x16) or 4-Gbit (x16), or 1.8 V supply 2 x 2-Gbit (×16),
NAND flash memories
(NAND01GWxB2B, NAND01GRxB2B, NAND01GRxB2C, NAND02GRxB2C,
NAND02GRxB2D, NAND04GxxB2D)
l
128-Mbit (x16) SDR (single data rate) LPSDRAM (M65KA128AJ) + 256-Mbit (x16)
SDR LPSDRAM (M65KA256AJ), or
l
128-Mbit (x16) SDR LPSDRAM (M65KA128AJ) + 512-Mbit (x16) SDR LPSDRAM
(M65KA512AC), or
l
256-Mbit (x16) SDR LPSDRAM (M65KA256AG), or
l
512-Mbit (x16) SDR LPSDRAM (M65KA512AB, or M65KA512AC, or M65KA512AH, or
M65KA512AM), or
l
2 x 512-Mbit (x16) SDR LPSDRAMs (M65KA512AB, or M65KA512AM, or
M65KA512AC, or M65KA512AJ), or
l
512-Mbit (x32) SDR LPSDRAM (M65KC512AB or M65KC512AC), or
l
1-Gbit (x32) SDR LPSDRAM (M65KC001AJ), or
l
512-Mbit (x16) DDR (double data rate) LPSDRAM (M65KG512AB, or M65KG512AH,
or M65KG512AM, or M65KG512AC), or
l
512-Mbit (x32) DDR LPSDRAM (M65KD512AC), or
l
1-Gbit (x16) DDR LPSDRAM (M65KG001AJ), or
l
1-Gbit (x32) DDR LPSDRAM (M65KD001AJ)
l
2 x 1-Gbit (x32) DDR LPSDRAM (M65KD001AJ).
The NAND flash memory and LPSDRAM components have separate power supplies. They
also have separate control, address and input/output signals, which allows simultaneous
access to both devices at any moment. They may or not share the same grounds,
depending on the package in which they are offered.
They are distinguished by a Chip Enable input, EF, for the NAND flash memory and a Chip
overview of the signals associated with each component.
This datasheet should be read in conjunction with the SLC large page NAND flash
datasheets (NAND01G-B2B_NAND02G-B2C, NAND01G-B2C, NAND02G-B2D, and
NAND04G-B2D_NAND08G-BxC) and LPSDRAM datasheets (M65KA256AG,
M65KA512AB, M65KA512AC, M65KG512AB, M65KC512AB, M65KC512AC,
M65KD512AC, M65KAxxxAJ, M65KA512AH, M65KG512AH, M65KGxxxAJ, M65KAxxxAM,
M65KCxxxAJ, M65KDxxxAJ, M65KGxxxAM, and M65KG512AC).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NB06QSA035 | 6 A, 35 V, SILICON, RECTIFIER DIODE |
| NB100LVEP224FAR2G | 100LVE SERIES, LOW SKEW CLOCK DRIVER, 24 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PQFP64 |
| NB14R1521 | 1 ELEMENT, 1521 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR |
| F14K69.5 | 1 ELEMENT, 69.5 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR |
| F14M520 | 1 ELEMENT, 520 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NANDBAR3N6AZPC5E | 制造商:Micron Technology Inc 功能描述:256MX8/64MX16 MCP PLASTIC PBF TFBGA 1.8V COMBO - Trays |
| NANDBAR3N8AZBB5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| NANDBAR4N0AZBA5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| NANDBAR4N0AZBA5F | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| NANDBAR4N2AZBA5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。