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參數(shù)資料
| 型號： | NANDB9R4N2CZBA5E |
| 廠商： | NUMONYX |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA149 |
| 封裝： | 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-149 |
| 文件頁數(shù)： | 30/52頁 |
| 文件大小： | 1126K |
| 代理商： | NANDB9R4N2CZBA5E |
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Maximum ratings
NANDxxxxNx
4
Maximum ratings
Stressing the device above the rating listed inTable 4: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 4.
Absolute maximum ratings(1)
1.
For detailed information on the LPSDRAM parameters, refer to the M65KA512AB, M65KA512AC,
M65KG512AB, M65KA256AG, M65KC512AB, M65KC512AC, M65KD512AC, M65KAxxxAJ,
M65KA512AH, M65KG512AH, M65KG512AC, M65KGxxxAJ, M65KAxxxAM, M65KCxxxAJ,
M65KDxxxAJ, and M65KGxxxAM datasheets available from your local Numonyx sales office.
Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient operating temperature
–30
85
°C
TSTG
Storage temperature
–55
125
°C
VIO
NAND flash input or output voltage
1.8 V
–0.6
2.7
V
2.6 V
–0.6
4.6
V
VDDDQ,
LPSDRAM input or output voltage
1.8 V
–0.5
2.3
V
VDDF
NAND flash supply voltage
1.8 V
–0.6
2.7
V
2.6 V
–0.6
4.6
V
VDDD
LPSDRAM supply voltage
1.8 V
–0.5
2.3
V
IOS
LPSDRAM short circuit output current
50
mA
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