參數(shù)資料
型號(hào): NAND512W4A0BZA1F
廠商: NUMONYX
元件分類: PROM
英文描述: 32M X 16 FLASH 3V PROM, 35 ns, PBGA63
封裝: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁數(shù): 41/57頁
文件大?。?/td> 916K
代理商: NAND512W4A0BZA1F
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
46/57
Ready/Busy Signal Electrical Characteristics
Figures 35, 34 and 36 show the electrical charac-
teristics for the Ready/Busy signal. The value re-
quired for the resistor RP can be calculated using
the following equation:
So,
where IL is the sum of the input currents of all the
devices tied to the Ready/Busy signal. RP max is
determined by the maximum value of tr.
Figure 34. Ready/Busy AC Waveform
Figure 35. Ready/Busy Load Circuit
Figure 36. Resistor Value Versus Waveform Timings For Ready/Busy Signal
Note: T = 25°C.
RPmin
VDDmax VOLmax
()
IOL
IL
+
------------------------------------------------------------
=
RPmin 1.8V
()
1.85V
3mA
IL
+
---------------------------
=
RPmin 3V
()
3.2V
8mA
IL
+
---------------------------
=
AI07564B
busy
VOH
ready VDD
VOL
tf
tr
AI07563B
RP
VDD
VSS
RB
DEVICE
Open Drain Output
ibusy
ai07565B
RP (K)
12
3
4
100
300
200
t r
,t
f
(ns)
1
2
3
1.7
0.85
30
1.7
tr
tf
ibusy
0
400
4
RP (K)
12
3
4
100
300
200
1
2
3
ibusy
(mA)
2.4
1.2
0.8
0.6
100
200
300
400
3.6
0
400
4
VDD = 1.8V, CL = 30pF
VDD = 3.3V, CL = 100pF
t r
,t
f
(ns)
ibusy
(mA)
60
90
120
0.57
0.43
相關(guān)PDF資料
PDF描述
NAND512W4A0BZB1E 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND512R3A0CV1F 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3A0AN6E 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3A0AZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R3A2AN6T 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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