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參數(shù)資料
| 型號： | NAND512W4A0BZA1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 32M X 16 FLASH 3V PROM, 35 ns, PBGA63 |
| 封裝： | 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63 |
| 文件頁數(shù)： | 27/57頁 |
| 文件大小： | 916K |
| 代理商： | NAND512W4A0BZA1F |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
Table 14. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
ble 15., Absolute Maximum Ratings, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 15. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to VDD + 2V for less than 20ns during transitions on I/O pins.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
s
Block Erase Time
2
3ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
–
50
125
°C
TSTG
Storage Temperature
–
65
150
°C
VIO
(1)
Input or Output Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
VDD
Supply Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
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