參數(shù)資料
型號(hào)： NAND512W4A0BZA1F
廠商： NUMONYX
元件分類(lèi)： PROM
英文描述： 32M X 16 FLASH 3V PROM, 35 ns, PBGA63
封裝： 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁(yè)數(shù)： 28/57頁(yè)
文件大?。?/td> 916K
代理商： NAND512W4A0BZA1F
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
34/57
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment
Conditions
summarized
in
Designers should check that the operating condi-
tions in their circuit match the measurement condi-
tions when relying on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Table 17. Capacitance
Note: TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested.
Parameter
NAND Flash
Units
Min
Max
Supply Voltage (VDD)
1.8V devices
1.7
1.95
V
3V devices
2.7
3.6
V
Ambient Temperature (TA)
Grade 1
0
70
°C
Grade 6
–40
85
°C
Load Capacitance (CL) (1 TTL GATE and CL)
1.8V devices
30
pF
3V devices (2.7 - 3.6V)
50
pF
3V devices (3.0 - 3.6V)
100
pF
Input Pulses Voltages
1.8V devices
0
VDD
V
3V devices
0.4
2.4
V
Input and Output Timing Ref. Voltages
1.8V devices
0.9
V
3V devices
1.5
V
Input Rise and Fall Times
5
ns
Output Circuit Resistors, Rref
8.35
k
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
10
pF
CI/O
Input/Output Capacitance
VIL = 0V
10
pF
相關(guān)PDF資料
PDF描述
NAND512W4A0BZB1E 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND512R3A0CV1F 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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NAND512R3A0AZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
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