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參數(shù)資料
| 型號： | NAND512W4A0BZB1E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 32M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-55 |
| 文件頁數(shù)： | 1/57頁 |
| 文件大小： | 916K |
| 代理商： | NAND512W4A0BZB1E |
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February 2005
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 1 Gbit memory array
–
Up to 32 Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (512 + 16 spare) Bytes
–
x16 device: (256 + 8 spare) Words
■
BLOCK SIZE
–
x8 device: (16K + 512 spare) Bytes
–
x16 device: (8K + 256 spare) Words
■
PAGE READ / PROGRAM
–
Random access: 12s (max)
–
Sequential access: 50ns (min)
–
Page program time: 200s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
FAST BLOCK ERASE
–
Block erase time: 2ms (Typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’ OPTION
–
Simple interface with microcontroller
■
SERIAL NUMBER OPTION
■
HARDWARE DATA PROTECTION
–
Program/Erase locked during Power
transitions
Figure 1. Packages
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
RoHS COMPLIANCE
–
Lead-Free Components are Compliant
with the RoHS Directive
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 9 x 11 x 1mm
TFBGA63 9 x 11 x 1.2mm
FBGA
USOP48 12 x 17 x 0.65mm
相關(guān)PDF資料 |
PDF描述 |
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| NAND512R3A0CV1F | 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
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| NAND512R3A0AZA6E | 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND512R3A2AN6T | 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND512R3A2CN1F | 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
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| NAND98R3M0DZBB5E | 制造商:Micron Technology Inc 功能描述:NUMNAND98R3M0DZBB5E 512+256MB NAND MCP 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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