參數(shù)資料
型號(hào)： NAND04GW4B2AN1E
廠商： NUMONYX
元件分類： PROM
英文描述： 256M X 16 FLASH 3V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù)： 32/57頁
文件大?。?/td> 887K
代理商： NAND04GW4B2AN1E
NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
38/57
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
Table 18. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 19. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to VDD + 2V for less than 20ns during transitions on I/O pins.
2. Compatibility with Lead-free soldering processes in accordance with ECOPACK 7191395 specifications. Not exceeding 250°C for
more than 10s, and peaking at 260°C.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
300
700
s
Block Erase Time
2
3ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
– 50
125
°C
TSTG
Storage Temperature
– 65
150
°C
TLEAD
Lead temperature during soldering (2)
260
°C
VIO
(1)
Input or Output Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
相關(guān)PDF資料
PDF描述
NAND02GW4B2AN1T 128M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND04GR4B2CN1F 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
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NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
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