參數(shù)資料
型號(hào): NAND02GW3B3BZB1F
廠商: NUMONYX
元件分類: PROM
英文描述: 256M X 8 FLASH 3V PROM, 35 ns, PBGA63
封裝: 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63
文件頁數(shù): 43/59頁
文件大?。?/td> 998K
代理商: NAND02GW3B3BZB1F
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
48/59
Figure 31. Page Read Operation AC Waveform
Note: A fifth address cycle is required for 2Gb, 4Gb and 8Gb devices.
tEHEL
CL
E
W
AL
R
I/O
RB
tWLWL
tWHBL
tALLRL2
00h
Data
N
Data
N+1
Data
N+2
Data
Last
tRHBL
tEHBH
tWHBH
tRLRL
tEHQZ
tRHQZ
ai08660
Busy
Command
Code
Address N Input
Data Output
from Address N to Last Byte or Word in Page
Add.N
cycle 1
Add.N
cycle 4
Add.N
cycle 3
Add.N
cycle 2
(Read Cycle time)
tRLRH
tBLBH1
30h
相關(guān)PDF資料
PDF描述
NAND02GW3B3BN1F 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND02GW3B3CN6 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND04GR3B3BN1F 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512W3B3BN1E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3CN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
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