參數(shù)資料
型號(hào)： NAND01GR4A3AZB6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
封裝： 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63
文件頁數(shù)： 11/56頁
文件大?。?/td> 882K
代理商： NAND01GR4A3AZB6F
19/56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
COMMAND SET
All bus write operations to the device are interpret-
ed by the Command Interface. The Commands
are input on I/O0-I/O7 and are latched on the rising
edge of Write Enable when the Command Latch
Enable signal is high. Device operations are se-
lected by writing specific commands to the Com-
mand
Register.
The
two-step
command
sequences for program and erase operations are
imposed to maximize data security.
The
Commands
are
summarized
in
Table 9. Commands
Note: 1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown.
2. Any undefined command sequence will be ignored by the device.
Command
Bus Write Operations(1)
Command accepted
during busy
1st CYCLE
2nd CYCLE
3rd CYCLE
Read A
00h
-
Read B
01h(2)
-
Read C
50h
-
Read Electronic Signature
90h
-
Read Status Register
70h
-
Yes
Page Program
80h
10h
-
Copy Back Program
00h
8Ah
10h
Block Erase
60h
D0h
-
Reset
FFh
-
Yes
相關(guān)PDF資料
PDF描述
NAND01GW4A3AN1T 64M X 16 FLASH 3V PROM, 12000 ns, PDSO48
NAND01GW4A1AZB1E 64M X 16 FLASH 3V PROM, 12000 ns, PBGA63
NAND256W3A1AV1T 32M X 8 FLASH 3V PROM, 10000 ns, PDSO48
NAND256R4A1AN1 16M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48
NAND256R4A3AN1 16M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2ADI6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND01GR4B2AN1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2AN6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2AZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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