- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189004 > NAND01GW4A1AZB1E (STMICROELECTRONICS) 64M X 16 FLASH 3V PROM, 12000 ns, PBGA63 PDF資料下載
參數(shù)資料
| 型號： | NAND01GW4A1AZB1E |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 64M X 16 FLASH 3V PROM, 12000 ns, PBGA63 |
| 封裝： | 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63 |
| 文件頁數(shù)： | 1/56頁 |
| 文件大?。?/td> | 882K |
| 代理商： | NAND01GW4A1AZB1E |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
1/56
PRELIMINARY DATA
July 2004
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 1 Gbit memory array
–
Up to 32 Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (512 + 16 spare) Bytes
–
x16 device: (256 + 8 spare) Words
■
BLOCK SIZE
–
x8 device: (16K + 512 spare) Bytes
–
x16 device: (8K + 256 spare) Words
■
PAGE READ / PROGRAM
–
Random access: 12s (max)
–
Sequential access: 50ns (min)
–
Page program time: 200s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
FAST BLOCK ERASE
–
Block erase time: 2ms (Typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’ OPTION
–
Simple interface with microcontroller
■
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
–
Boot from NAND support
–
Automatic Memory Download
■
SERIAL NUMBER OPTION
Figure 1. Packages
■
HARDWARE DATA PROTECTION
–
Program/Erase locked during Power
transitions
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
PC Demo board with simulation software
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 8.5 x 15 x 1mm
TFBGA63 8.5 x 15 x 1.2mm
FBGA
WSOP48 12 x 17 x 0.65mm
相關PDF資料 |
PDF描述 |
|---|---|
| NAND256W3A1AV1T | 32M X 8 FLASH 3V PROM, 10000 ns, PDSO48 |
| NAND256R4A1AN1 | 16M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48 |
| NAND256R4A3AN1 | 16M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48 |
| NAND256R4A3AZA1T | 16M X 16 FLASH 1.8V PROM, 10000 ns, PBGA55 |
| NAND128W4A1AZA6T | 8M X 16 FLASH 3V PROM, 10000 ns, PBGA55 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GW4A2AN1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2AN1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2AN1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2AN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2AN6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
發(fā)布緊急采購，3分鐘左右您將得到回復。