參數(shù)資料
型號(hào)： MX29F1611
廠商： Electronic Theatre Controls, Inc.
英文描述： 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
中文描述： 1,600位[2米x 8/1M × 16] CMOS單電壓閃存EEPROM PAGEMODE
文件頁(yè)數(shù)： 7/36頁(yè)
文件大小： 171K
代理商： MX29F1611
7
P/N: PM0440
REV. 1.6, JUL. 16, 1998
MX29F1611
Command
Sequence
Sector
Protection
Sector
Unprotect
.
6
Verify Sector
Protect
Sleep
Abort
Bus Write
Cycles Req'd
6
4
3
3
First Bus
Write Cycle
Addr
Data
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
Second Bus
Write Cycle
Addr
Data
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
Third Bus
Write Cycle
Addr
Data
5555H
60H
5555H
60H
5555H
90H
5555H
C0H
5555H
E0H
Fourth Bus
Read/Write Cycle Data
Addr
5555H
AAH
5555H
AAH
*
C2H*
Fifth Bus
Write Cycle
Addr
Data
2AAAH
55H
2AAAH
55H
Sixth Bus
Write Cycle
Addr
Data
SA**
20H
SA**
40H
Notes:
1.Address bit A15 -- A19 = X = Don't care for all address commands except for Program Address(PA) and Sector Address(SA).
5555H and 2AAAH address command codes stand for Hex number starting from A0 to A14.
2. Bus operations are defined in Table 2.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA = Address of the sector to be erased. The combination of A16 -- A19 will uniquely select any sector.
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
SRD = Data read from status register.
5. Only Q0-Q7 command data is taken, Q8-Q15 = Don't care.
* Refer to Table 4, Figure 12.
** Only the top and the bottom sectors have protect- bit feature. SA = (A19,A18,A17,A16) = 0000B or 1111B is valid.
COMMAND DEFINITIONS(continue Table 3.)
INDEX
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參數(shù)描述
MX29F1615 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F200BMC-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
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