參數(shù)資料
型號(hào): MTB50P03HDL
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Power MOSFET 50 Amps, 30 Volts, Logic Level(50A, 30V, D2PAK, P溝道功率MOSFET)
中文描述: 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CASE 418B-04, D2PAK-3
文件頁數(shù): 9/12頁
文件大?。?/td> 94K
代理商: MTB50P03HDL
MTB50P03HDL
http://onsemi.com
9
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad . Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SC–59, SC–70/SOT–323, SOD–123, SOT–23, SOT–143,
SOT–223, SO–8, SO–14, SO–16, and SMB/SMC diode
packages, the stencil opening should be the same as the pad
size or a 1:1 registration. This is not the case with the DPAK
and D2PAK packages. If one uses a 1:1 opening to screen
solder onto the drain pad, misalignment and/or
“tombstoning” may occur due to an excess of solder. For
these two packages, the opening in the stencil for the paste
should be approximately 50% of the tab area. The opening
for the leads is still a 1:1 registration. Figure 18 shows a
typical stencil for the DPAK and D2PAK packages. The
pattern of the opening in the stencil for the drain pad is not
critical as long as it allows approximately 50% of the pad to
be covered with paste.
Figure 18. Typical Stencil for DPAK and
D2PAK Packages
SOLDER PASTE
OPENINGS
STENCIL
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
°
C.
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
* Due to shadowing and the inability to set the wave height
to incorporate other surface mount components, the D2PAK
is not recommended for wave soldering.
相關(guān)PDF資料
PDF描述
MTD20N06HDLT4 Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK
MTD20N06HDLT4G Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK
MTD6N15 Power Field Effect Transistor DPAK for Surface Mount(功率場(chǎng)效應(yīng)晶體管)
MTD6N20E Power MOSFET 6 Amps, 200 Volts(6A, 200V功率MOSFET)
MTG-12864A MTG-12864A
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTB50P03HDLG 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLT4 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLT4G 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height)
MTB50SAM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height)