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參數(shù)資料
| 型號： | MTB50P03HDL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 50 Amps, 30 Volts, Logic Level(50A, 30V, D2PAK, P溝道功率MOSFET) |
| 中文描述： | 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | MTB50P03HDL |
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev.4
1
Publication Order Number:
MTB50P03HDL/D
MTB50P03HDL
Preferred Device
Power MOSFET
50 Amps, 30 Volts, Logic Level
P–Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured – Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
30
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
≤
10 ms)
Drain Current – Continuous
Drain Current
– Continuous @ 100
°
C
Drain Current
– Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TC = 25
°
C,
when mounted with the minimum
recommended pad size
30
Vdc
VGS
VGSM
ID
ID
IDM
PD
±
15
±
20
Vdc
Vpk
50
31
150
Adc
Apk
125
1.0
2.5
Watts
W/
°
C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 50 Apk, L = 1.0 mH, RG = 25
)
Thermal Resistance
– Junction to Case
– Junction to Ambient
– Junction to Ambient, when mounted
with the minimum recommended pad size
EAS
1250
mJ
R
θ
JC
R
θ
JA
R
θ
JA
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10
seconds
TL
260
°
C
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
M50P03HDL
YWW
1
Gate
2
Drain
3
Source
50 AMPERES
30 VOLTS
RDS(on) = 25 m
Device
Package
Shipping
ORDERING INFORMATION
MTB50P03HDL
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
P–Channel
M50P03HDL
Y
WW
= Device Code
= Year
= Work Week
MTB50P03HDLT4
D2PAK
800/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
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|---|---|
| MTB50P03HDLG | 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLT4 | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLT4G | 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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