參數(shù)資料
型號(hào): MTB3N120E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 3.0 AMPERES 1200 VOLTS
中文描述: 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/12頁
文件大小: 322K
代理商: MTB3N120E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1.0
0.1
0.01
1.0E–05
t, TIME (s)
D = 0.5
0.2
r
T
0.1
0.02
0.01
120
100
40
0
25
50
75
100
125
150
100
10
1.0
0.01
0.1
1
10
100
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Figure 13. Thermal Response
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
SINGLE PULSE
80
60
20
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1,000
10,000
0.1
100
μ
s
10
μ
s
1 ms
10 ms
dc
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+01
1.0E+00
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05
ID = 3 A
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