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參數(shù)資料
| 型號： | MTB3N120E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1200 VOLTS |
| 中文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 322K |
| 代理商： | MTB3N120E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
1200
—
—
1.28
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 1200 Vdc, VGS = 0 Vdc)
(VDS = 1200 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.1
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
4.0
5.0
Ohm
—
—
—
—
18.0
15.8
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
gFS
2.5
3.1
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
2130
2980
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
1710
2390
Reverse Transfer Capacitance
—
932
1860
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
13.6
30
ns
Rise Time
(VDD = 600 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
—
12.6
30
Turn–Off Delay Time
—
35.8
70
Fall Time
—
20.7
40
Gate Charge
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
31
40
nC
(VDS = 600 Vdc, ID = 3.0 Adc,
—
8.0
—
—
11
—
—
14
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.80
0.65
1.0
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
—
394
—
ns
(IS = 3.0 Adc, VGS = 0 Vdc,
—
118
—
tb
—
276
—
Reverse Recovery Stored Charge
QRR
—
2.11
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
LS
—
7.5
—
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