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參數(shù)資料
| 型號： | MTB3N120E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1200 VOLTS |
| 中文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 322K |
| 代理商： | MTB3N120E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
10,000
1,000
100
10
1
0
400
600
1000
1200
100
°
C
25
°
C
2.5
2.0
1.5
1.0
0.5
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
VGS = 10 V
ID = 1.5 A
5.4
5.0
4.6
4.2
3.8
ID, DRAIN CURRENT (AMPS)
15 V
8
2
0
0
2
4
6
5
3
1
6
0
0
6
12
18
24
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VDS
≥
10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
VGS = 0 V
5
4
3
2
3
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
0
2
4
6
5
3
1
TJ = 125
°
C
1
6
4
200
25
°
C
TJ = –55
°
C
100
°
C
25
°
C
4 V
5 V
6 V
VGS = 10 V
TJ = 25
°
C
6
0
5
4
3
2
1
800
VGS = 10 V
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