- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371150 > MTB3N120E (MOTOROLA INC) TMOS POWER FET 3.0 AMPERES 1200 VOLTS PDF資料下載
參數(shù)資料
| 型號(hào)： | MTB3N120E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1200 VOLTS |
| 中文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 322K |
| 代理商： | MTB3N120E |
5
Motorola TMOS Power MOSFET Transistor Device Data
V
V
3.0
0
0.55
0.59
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.63
0.67
0.71
0.75
0.79
1000
100
1
1
10
100
16
14
8
6
4
2
0
0
Qg, TOTAL GATE CHARGE (nC)
Q2
400
350
300
250
0
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
Figure 10. Diode Forward Voltage versus Current
I
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
t
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
ID = 3 A
TJ = 25
°
C
10
Q1
Q3
VDD = 600 V
ID = 3 A
VGS = 10 V
TJ = 25
°
C
VGS
VDS
12
10
4
16
8
12
20
24
28
32
200
150
100
50
QT
2.4
1.2
0.6
1.8
VGS = 0 V
TJ = 25
°
C
tr
td(off)
td(on)
tf
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB40N10E | TMOS POWER FET 40 AMPERES 100 VOLTS |
| MTB55N06Z | TMOS POWER FET 55 AMPERES 60 VOLTS |
| MTD1302 | TMOS POWER FET 20 AMPERES 30 VOLTS |
| MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS |
| MTD15N06V | TMOS POWER FET 15 AMPERES 60 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB3N120ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R |
| MTB3N60E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB3N60ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB406N | 功能描述:撥動(dòng)開(kāi)關(guān) 4PDT TOGGLE SWITCH Decorat Bat Actuator RoHS:否 制造商:C&K Components 觸點(diǎn)形式:DPDT 開(kāi)關(guān)功能:ON - ON - ON 電流額定值: 電壓額定值 AC:20 V 電壓額定值 DC:20 V 功率額定值:0.4 VA 端接類型:V-Bracket 安裝風(fēng)格: 端子密封:Epoxy 觸點(diǎn)電鍍:Gold 照明:Not Illuminated |
| MTB40N10E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK Rail |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。