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參數(shù)資料
| 型號(hào)： | MTD1302 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 20 AMPERES 30 VOLTS |
| 中文描述： | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 205K |
| 代理商： | MTD1302 |
1
Motorola TMOS Power MOSFET Transistor Device Data
" !
N–Channel Enhancement Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode Is Characterized for Use In Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13
″
/ 2500 Unit
Tape & Reel, Add “T4” Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
30
30
±
20
±
20
20
16
60
74
0.592
1.75
– 55 to 150
200
Unit
Vdc
Vdc
Vdc
Vpk
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TC = 25
°
C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 20 Apk, L = 1.0 mH, RG = 25
)
Thermal Resistance
Junction to Case
Junction–to–Ambient
Junction–to–Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 5.0 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Adc
Apk
Watts
W/
°
C
Watts
°
C
mJ
TJ, Tstg
EAS
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.67
100
71.4
260
°
C/W
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTD1302/D
SEMICONDUCTOR TECHNICAL DATA
CASE 369A–13, Style 2
TMOS POWER FET
20 AMPERES
30 VOLTS
RDS(on) = 0.022 OHM
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