參數(shù)資料
型號: MT55L512L18F
廠商: Micron Technology, Inc.
英文描述: 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
中文描述: 8MB的:為512k × 18,流量通過ZBT SRAM的(8兆流通式同步靜態(tài)存儲器)
文件頁數(shù): 19/25頁
文件大?。?/td> 380K
代理商: MT55L512L18F
19
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
Q
50
V = 1.5V
Z = 50
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
3.3V I/O AC TEST CONDITIONS
Input pulse levels ...................................V
SS
to 3.3V
Input rise and fall times..................................... 1ns
Input timing reference levels.......................... 1.5V
Output reference levels ................................... 1.5V
Output load ............................. See Figures 1 and 2
LOAD DERATING CURVES
The Micron 512K x 18, 256K x 32, and 256K x 36
ZBT SRAM timing is dependent upon the capacitive
loading on the outputs.
Consult the factory for copies of I/O current
versus voltage curves.
Q
50
V = 1.25V
Z = 50
Figure 3
Q
1,538
1,667
5pF
+2.5V
Figure 4
2.5V I/O AC TEST CONDITIONS
Input pulse levels ...................................V
SS
to 2.5V
Input rise and fall times..................................... 1ns
Input timing reference levels........................ 1.25V
Output reference levels ................................. 1.25V
Output load ............................. See Figures 3 and 4
3.3V I/O Output Load Equivalents
2.5V I/O Output Load Equivalents
相關PDF資料
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