參數(shù)資料
型號： MT46V32M81AZ4-6T:G
元件分類： DRAM
英文描述： 32M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： 0.400 INCH, PLASTIC, TSOP-66
文件頁數(shù)： 8/82頁
文件大小： 2866K
128Mb: x4, x8, x16
DDR SDRAM
09005aef8074a655
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MBDDRx4x8x16_2.fm - Rev. J 7/04 EN
16
2000 Micron Technology, Inc. All rights reserved.
Commands
Table 6 and Table 7 provide a quick reference of
available commands. This is followed by a verbal
description of each command. Two additional Truth
appear following the Operation section, provide cur-
rent state/next state information.
NOTE:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. BA0-BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0 select the mode register;
BA0 = 1, BA1 = 0 select extended mode register; other combinations of BA0-BA1 are reserved). A0-A11 provide the op-
code to be written to the selected mode register.
3. BA0-BA1 provide bank address and A0-A11 provide row address.
4. BA0-BA1 provide bank address; A0-Ai provide column address, (where i=8 for x16, i=9 for x8, and i=9,11 for x4) A10
HIGH enables the auto precharge feature (non persistent), and A10 LOW disables the auto precharge feature.
5. A10 LOW: BA0-BA1 determine which bank is precharged.
A10 HIGH: all banks are precharged and BA0-BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; for within the Self Refresh mode all inputs and I/Os are “Don’t Care”
except for CKE.
8. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for read
bursts with auto precharge enabled and for write bursts.
9. DESELECT and NOP are functionally interchangeable.
10. All states and sequences not shown are illegal or reserved.
NOTE:
1. Used to mask write data; provided coincident with the corresponding data.
Table 6:
Truth Table – Commands
Notes 1 and 10 apply to all commands
NAME (FUNCTION)
CS#
RAS#
CAS#
WE#
ADDR
NOTES
DESELECT (NOP)
H
XXX
X
9
NO OPERATION (NOP)
L
HHH
X
9
ACTIVE (Select bank and activate row)
L
H
Bank/Row
3
READ (Select bank and column, and start READ burst)
LH
Bank/Col
4
WRITE (Select bank and column, and start WRITE burst)
L
H
L
Bank/Col
4
BURST TERMINATE
LH
H
L
X
8
PRECHARGE (Deactivate row in bank or banks)
L
H
L
Code
5
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LLL
H
X
6, 7
LOAD MODE REGISTER
LLLL
Op-Code
2
Table 7:
Truth Table – DM Operation
Note 1 applies to all commands
NAME (FUNCTION)
DM
DQ
Write Enable
L
Valid
Write Inhibit
H
X
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