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參數(shù)資料
| 型號(hào)： | MSC1202Y3RHHT |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 33 MHz, MICROCONTROLLER, PQCC36 |
| 封裝： | GREEN, PLASTIC, QFN-36 |
| 文件頁(yè)數(shù)： | 75/93頁(yè) |
| 文件大小： | 1093K |
| 代理商： | MSC1202Y3RHHT |
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MSC1200
MSC1201
MSC1202
SBAS317E APRIL 2004 REVISED MAY 2006
www.ti.com
77
Flash Memory Control (FMCON)
7
6
5
4
3
2
1
0
Reset Value
SFR EEh
0
PGERA
0
FRCM
0
BUSY
SPM
FPM
02h
PGERA
Page Erase. Available in both user and program modes.
bit 6
0 = Disable Page Erase Mode
1 = Enable Page Erase Mode (automatically set by page_erase Boot ROM routine)
FRCM
Frequency Control Mode.
bit 4
0 = Bypass (default)
1 = Use Delay Line. Recommended for saving power.
BUSY
Write/Erase BUSY Signal.
bit 2
0 = Idle or Available
1 = Busy
SPM
Serial Programming Mode. Read-only.
bit 1
0 = Indicates the device is not in serial programming mode.
1 = Indicates the device is in serial programming mode (if FPM also = 1).
FPM
Flash Programming Mode. Read-only.
bit 0
0 = Indicates the device is operating in UAM.
1 = Indicates the device is operating in programming mode.
Flash Memory Timing Control (FTCON)
7
6
5
4
3
2
1
0
Reset Value
SFR EFh
FER3
FER2
FER1
FER0
FWR3
FWR2
FWR1
FWR0
A5h
Refer to Flash Memory Characteristics.
FER30
Set Erase. Flash Erase Time = (1 + FER)
(MSEC + 1) tCLK. This can be broken into multiple, shorter erase times.
bits 74
For more Information, see Application Report SBAA137, Incremental Flash Memory Page Erase, available for
download from www.ti.com.
Industrial temperature range: 11ms
Commercial temperature range: 5ms
FWR30
Set Write. Set Flash Write Time = (1 + FWR)
(USEC + 1) 5 tCLK. Total writing time will be longer. For more
bits 30
Information, see Application Report SBAA087, In-Application Flash Programming, available for download from
www.ti.com.
Range: 30
s to 40s.
B Register (B)
7
6
5
4
3
2
1
0
Reset Value
SFR F0h
00h
B.70
B Register. This register serves as a second accumulator for certain arithmetic operations.
bits 70
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