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參數(shù)資料
| 型號： | MRF9060LR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 238K |
| 代理商： | MRF9060LR1 |
MRF9060LR1 MRF9060LSR1
5
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two
Tone Common
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
16
17
—
dB
Two
Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
36
40
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
31
28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
16
9
dB
Two
Tone Common
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
—
17
—
dB
Two
Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
39
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
31
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
16
—
dB
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 450 mA,
f1 = 945.0 MHz)
P
1dB
—
70
—
W
Common
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 450 mA,
f1 = 945.0 MHz)
G
ps
—
17
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 450 mA,
f1 = 945.0 MHz)
η
—
51
—
%
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 450 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
No Degradation In Output Power
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9060LR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060LR5 | 功能描述:射頻MOSFET電源晶體管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9060LSR1 | 功能描述:射頻MOSFET電源晶體管 60W 945MHZ NI360S LOW AU RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9060LSR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060LSR5 | 功能描述:射頻MOSFET電源晶體管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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