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參數(shù)資料
| 型號： | MRF9200LSR3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | N−Channel Enhancement−Mode Lateral MOSFETs |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 775K |
| 代理商： | MRF9200LSR3 |
MRF9200LR3 MRF9200LSR3
5
1
Freescale Semiconductor
Wireless RF Product Device Data
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed for
broadband commercial and industrial
applications with
frequencies to 1000 M
Hz
.
The high gain and broadband performance of these
devices make them ideal for large
signal, common
source amplifier applica-
tions in 26 volt base station equipment.
Typical Single
Carrier N
CDMA Performance @ 880 MHz: V
DD
= 26 Volts,
I
DQ
= 2400 mA, P
out
= 40 Watts Avg., IS
95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/
Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 25%
ACPR @ 750 kHz Offset —
46.5 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1
VSWR, @
26
Vdc,
880 MHz, 40 Watts N
CDMA
Output Power
Characterized with Series Equivalent Large
Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
In Tape and Reel.
R3
Suffix =
250
Units per
56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +65
Vdc
Gate
Source Voltage
V
GS
0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
625
3.6
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
CW Operation
Case Temperature 60
°
C
Case Temperature 80
°
C
CW
200
160
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 60
°
C, 200 W CW
Case Temperature 80
°
C, 40 W CW
R
θ
JC
0.28
0.34
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
AN1955.
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9200L
Rev. 1, 12/2004
Freescale Semiconductor
Technical Data
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE N
CDMA
LATERAL N
CHANNEL
RF POWER MOSFETs
CASE 465C
02, STYLE 1
NI
880S
MRF9200LSR3
CASE 465B
03, STYLE 1
NI
880
MRF9200LR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
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