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參數(shù)資料
| 型號(hào)： | MRF9582NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET |
| 中文描述： | 硅橫向場效應(yīng)管，N溝道增強(qiáng)型MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 297K |
| 代理商： | MRF9582NT1 |
MRF9582NT1
1
RF Device Data
Freescale Semiconductor
Silicon Lateral FET, N-Channel
Enhancement-Mode MOSFET
Designed for use in medium voltage, moderate power amplifiers such as
portable analog and digital cellular radios and PC RF modems.
Typical CW RF Performance @ 849 MHz: V
DD
= 12.5 Volts, I
DQ
= 300 mA,
P
out
= 38 dBm
Power Gain — 10.5 dB
Drain Efficiency — 55%
Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
17
Vdc
Drain-Gate Voltage (R
GS
= 1.0 M
Ω
)
V
DGO
17
Vdc
Gate-Source Voltage
V
GS
4.0
Vdc
Drain Current - Continuous
I
D
1.5
Adc
Total Device Dissipation @ T
C
= 85
°
C
P
D
10.5
W
Storage Temperature Range
T
stg
-65 to 150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
Table 3. Moisture Sensitivity Level
R
θ
JC
6
°
C/W
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°
C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF9582NT1
Rev. 1, 7/2006
Freescale Semiconductor
Technical Data
MRF9582NT1
849 MHz, 38 dBm, 12.5 V
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
CASE 449-02, STYLE 1
PLD-1
4
1
2
3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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