參數(shù)資料
型號: MRF7S21210HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 2/15頁
文件大?。?/td> 458K
代理商: MRF7S21210HSR3
10
RF Device Data
Freescale Semiconductor
MRF7S21210HR3 MRF7S21210HSR3
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 12. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
PROBABILITY
(%)
WCDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
60
110
10
(dB)
20
30
40
50
70
80
90
100
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
1.8
3.6
5.4
9
f, FREQUENCY (MHz)
Figure 13. Single-Carrier W-CDMA Spectrum
7.2
ACPR in 3.84 MHz
Integrated BW
ACPR in 3.84 MHz
Integrated BW
相關(guān)PDF資料
PDF描述
MRF7S27130HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S35015HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S38010HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S38040HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF7S38040HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S21210HSR5 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S27130HR3 功能描述:射頻MOSFET電源晶體管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S27130HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S27130HR5 功能描述:射頻MOSFET電源晶體管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S27130HSR3 功能描述:射頻MOSFET電源晶體管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray