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參數(shù)資料
| 型號(hào)： | MRF7S35015HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400S-240, CASE 465J-02, 2 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 819K |
| 代理商： | MRF7S35015HSR3 |
MRF7S35015HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
Typical Pulsed Performance: VDD =32 Volts,IDQ =50 mA,
Pout = 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 16 dB
Drain Efficiency — 41%
Typical WiMAX Performance: VDD =32 Volts,IDQ = 150 mA,
Pout = 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4,4Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 18 dB
Drain Efficiency — 16%
RCE — --33 dB (EVM — 2.2% rms)
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak
Power
Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 15 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 81°C, 15 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle
RθJC
0.60
0.73
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
MRF7S35015HSR3
3100--3500 MHz, 15 W PEAK, 32 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465J--02, STYLE 1
NI--400S--240
Document Number: MRF7S35015HS
Rev. 2, 4/2011
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2008, 2011. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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