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參數(shù)資料
| 型號(hào)： | MRF7S21210HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 458K |
| 代理商： | MRF7S21210HSR3 |
8
RF Device Data
Freescale Semiconductor
MRF7S21210HR3 MRF7S21210HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
2060
f, FREQUENCY (MHz)
Figure 5. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 63 Watts Avg.
16
0
4
8
12
19
18
17
39
31
30
29
28
29
31
33
35
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
16
15
14
13
12
11
10
2080
2100
2120
2140
2160
2180
2200
2220
27
37
20
P
ARC
(dB)
1.8
1
1.2
1.4
1.6
2
ACPR
(dBc)
Figure 6. CW Power Gain versus Output Power
100
14
19
1
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 Vdc, f = 2140 MHz
CW Measurements
17
16
15
10
300
G
ps
,POWER
GAIN
(dB)
18
IDQ = 2100 mA
1750 mA
700 mA
1050 mA
1400 mA
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
70
10
20
30
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
40
IM3U
IM3L
IM5U
IM5L
IM7L
IM7U
Figure 8. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
50
0
2
4
OUTPUT
COMPRESSION
A
T
0.01%
PROBABILITY
ON
CCDF
(dB)
30
70
90
130
15
45
40
35
30
25
20
η
D,
DRAIN
EFFICIENCY
(%)
1 dB = 48.327 W
2 dB = 67.216 W
3 dB = 89.144 W
110
ηD
ACPR
PARC
ACPR
(dBc)
55
25
30
35
45
40
50
19
G
ps
,POWER
GAIN
(dB)
18.5
18
17.5
17
16.5
16
Gps
20
IRL
Gps
ACPR
ηD
PARC
VDD = 28 Vdc, Pout = 63 W (Avg.)
IDQ = 1400 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
60
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1400 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
Note: Measurement conducted with device soldered on Freescale test fixture.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21210HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S27130HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S27130HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S27130HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S27130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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